npn 2N2218A ? 2n2219a comset semiconductors 1/3 the 2N2218A and 2n2219a are npn transistors mounted in to-39 metal case . they are designed for high-speed switching applications, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. compliance to rohs absolute maximum ratings symbol ratings value unit 2N2218A v ceo collector-emitter voltage 2n2219a 40 v 2N2218A v cbo collector-base voltage 2n2219a 75 v 2N2218A v ebo emitter-base voltage 2n2219a 6 v 2N2218A i c collector current 2n2219a 800 ma 2N2218A p d total power dissipation @ t amb = 25 2n2219a 0.8 watts 2N2218A p d total power dissipation @ t case = 25 2n2219a 3 watts 2N2218A t j junction temperature 2n2219a 175 c 2N2218A t stg storage temperature range 2n2219a -65 to +200 c thermal characteristics symbol ratings value unit 2N2218A r thj-a thermal resistance, junction to ambient in free air 2n2219a 50 c/w 2N2218A r thj-c thermal resistance, junction to case 2n2219a 187.5 c/w s s i i l l i i c c o o n n p p l l a a n n a a r r e e p p i i t t a a x x i i a a l l t t r r a a n n s s i i s s t t o o r r s s
npn 2N2218A ? 2n2219a comset semiconductors 3/ 3 electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ mx unit 2N2218A i cbo collector cutoff current v cb =60 v, i e =0 2n2219a - - 10 na 2N2218A i cbo collector cutoff current v cb =60 v, i e =0, t j =150c 2n2219a - - 10 a 2N2218A i ebo emitter cutoff current v be =3.0 v, i c =0 2n2219a - - 10 na 2N2218A i cex collector cutoff current v ce =60 v, -v be =3v 2n2219a - - 10 na 2N2218A v ceo (1) collector emitter breakdown voltage i c =10 ma, i b =0 2n2219a 40 - - v 2N2218A v cbo collector base breakdown voltage i c =10 a, i e =0 2n2219a 75 - - v 2N2218A v ebo emitter base breakdown voltage i e =10 a, i c =0 2n2219a 6 - - v 2N2218A 20 - - i c =0.1 ma, v ce =10 v 2n2219a 35 - - 2N2218A 25 - - i c =1 ma, v ce =10 v 2n2219a 50 - - 2N2218A 35 - - i c =10 ma, v ce =10 v 2n2219a 75 - - 2N2218A 15 - - i c =10 ma, v ce =10 v t amb = -55 2n2219a 35 - - 2N2218A 20 - - i c =150 ma, v ce =1 v 2n2219a 50 - - 2N2218A 40 - 120 i c =150 ma, v ce =10 v 2n2219a 100 - 300 2N2218A 25 - - h fe (1) dc current gain i c =500 ma, v ce =10 v 2n2219a 40 - - - 2N2218A i c =150 ma, i b =15 ma 2n2219a - - 0.3 2N2218A v ce(sat) collector-emitter saturation voltage (1) i c =500 ma, i b =50 ma 2n2219a - - 1 2N2218A i c =150 ma, i b =15 ma 2n2219a - - 1.2 2N2218A v be(sat) base-emitter saturation voltage (1) i c =500 ma, i b =50 ma 2n2219a - - 2 v symbol ratings test condition(s) min typ mx unit 2N2218A 250 - - f t transition frequency i c =20 ma, v ce =20 v f= 100mhz 2n2219a 300 - - mhz 2N2218A 30 - 150 i c =1 ma, v ce =10 v f= 1khz 2n2219a 50 - 300 - 2N2218A 50 - 300 h fe small signal current gain i c =10 ma, v ce =10 v f= 1khz 2n2219a 75 - 375
npn 2N2218A ? 2n2219a comset semiconductors 3/ 3 symbol ratings test condition(s) min typ mx unit 2N2218A t d delay time i c =150 ma, i b =15 ma -v bb =0.5 v, v cc =30 v 2n2219a - - 10 ns 2N2218A t r rise time i c =150 ma, i b =15 ma -v bb =0.5 v, v cc =30 v 2n2219a - - 25 ns 2N2218A t s storage time i c =150 ma, i b1 = -i b2 =15 ma v cc =30 v 2n2219a - - 225 ns 2N2218A t f fall time i c =150 ma, i b1 = -i b2 =15 ma v cc =30 v 2n2219a - - 60 ns 2N2218A r b ,c c feedback time constant i c =20 ma, v ce =20 v f= 31.8mhz 2n2219a - - 150 ps (1) pulse conditions : tp < 300 s, =2% mechanical data case to-39 information furnished is believed to be accurate a nd reliable. however, cs assumes no responsability for the consequences of use of such info rmation nor for errors that could appear. data are subject to change without notice. dimensions mm a 6,25 b 13,59 c 9,24 d 8,24 e 0,78 f 1,05 g 0,42 h 45 l 4,1 pin 1 : emitter pin 2 : base case : collector
|
